| PART |
Description |
Maker |
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| W9751G6KB |
8M ?4 BANKS ?16 BIT DDR2 SDRAM
|
Winbond
|
| W9751G6KB |
8M X 4 BANKS X 16 BIT DDR2 SDRAM
|
Winbond
|
| MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| EDE1108AASE-6E-E EDE1104AASE EDE1104AASE-4A-E EDE1 |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.
|
ELPIDA[Elpida Memory]
|
| EDE1104AASE-5C-E EDE1108AASE-5C-E EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. 256M X 4 DDR DRAM, 0.6 ns, PBGA68
|
Elpida Memory, Inc.
|
| W986416CH W986416CH-8H |
1M x 16 BIT x 4 BANKS SDRAM
x16 SDRAM
|
Winbond Electronics Corp
|
| W982516BH75L W982516BH75I W982516BH-75 |
4M X 4 BANKS X 16 BIT SDRAM
|
http://
Winbond Electronics Corp
|
| W982516BH W982516BH-7 W982516BH-75 W982516BH75I W9 |
4M X 4 BANKS X 16 BIT SDRAM
|
WINBOND[Winbond]
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 97SD3232RPMK 97SD3232 97SD3232RPME 97SD3232RPMH 97 |
1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| M14D5121632A M14D5121632A-2.5BG M14D5121632A-3BG |
8M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
